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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1105 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1605 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -120 -120 -7 -3 UNIT V V V A W ae ae Collector power dissipation Junction temperature Storage temperature TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current CONDITIONS IC=-25mA, RBE= IE=-50mA, IC=0 IC=-1.5A ,IB=-3mA IC=-3A ,IB=-30mA IC=-1.5A ,IB=-3mA IC=-3A ,IB=-30mA VCB=-120V, IE=0 VCE=-100V, RBE= IC=-1.5A ; VCE=-3V MIN -120 -7 2SB1105 SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD TYP. MAX UNIT V V -1.5 -3.0 -2.0 -3.5 -100 |I |I V V V V A A IN DC current gain Diode forward voltage ANG CH SEM E ID=-3A OND IC 1000 TOR UC -10 3.0 V 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1105 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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